文章信息/Info

Title:

Recent Progress of Bi2Te3-Based Thermoelectric Thin Film Materials and Devices

文章編號:

1674-3962(2022)12-1005-13

作者:

胡少雄1; 2; 周曼3; 任超杰3; 張博涵1; 祝薇2; 3; 趙未昀2; 鄧元2; 3

（1.北京航空航天大學(xué)材料科學(xué)與工程學(xué)院，北京 100191）（2.北京航空航天大學(xué)杭州創(chuàng)新研究院 浙江省智能傳感材料與芯片集成技術(shù)重點(diǎn)實驗室，浙江 杭州 310051）（3.北京航空航天大學(xué) 前沿科學(xué)技術(shù)創(chuàng)新研究院，北京 100191）

Author(s):

HU Shaoxiong1; 2; ZHOU Man3; REN Chaojie3; ZHANG Bohan1; ZHU Wei2; 3; ZHAO WeiYun2; DENG Yuan2; 3

（1.School of Materials Science and Engineering, Beihang University, Beijing 100191, China) （2.Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province，Hangzhou Innovation Institute of Beihang University，Hangzhou 310051，China) （3.Research Institute for Frontier Science, Beihang University, Beijing 100191, China)

關(guān)鍵詞:

Bi2Te3; 薄膜; 熱電材料; 熱電器件; 制備方法; 性能優(yōu)化

Keywords:

Bi2Te3;  thin film;  thermoelectric materials;  thermoelectric device;  preparation method;  performance optimization

分類號:

TN37

DOI:

10.7502/j.issn.1674-3962.202208006

文獻(xiàn)標(biāo)志碼:

A

摘要:

隨著微電子技術(shù)的快速進(jìn)步，電子器件不斷朝著高性能、微型化、低功耗、自供電的方向發(fā)展。在器件性能和集成度不斷提高的同時，小空間的快速散熱問題成為制約其發(fā)展的關(guān)鍵瓶頸之一。熱電薄膜器件是一種以熱電薄膜材料為核心的半導(dǎo)體能源轉(zhuǎn)換器件，具有全固態(tài)、無噪音、免維護(hù)、體積小等優(yōu)點(diǎn)，在高熱流密度電子元器件快速散熱和低功耗電子器件自供電等領(lǐng)域具有迫切的應(yīng)用需求和廣闊的市場前景。Bi2Te3基熱電材料是目前室溫條件下性能最好的熱電材料，以Bi2Te3基熱電薄膜材料與器件為核心，重點(diǎn)介紹了常用熱電薄膜材料的制備與性能優(yōu)化方法，熱電薄膜器件的結(jié)構(gòu)設(shè)計、制備工藝以及界面優(yōu)化手段，并對熱電薄膜器件在熱電發(fā)電和熱電制冷領(lǐng)域的應(yīng)用做了簡要介紹。

Abstract:

With the rapid development of microelectronic technology, electronic devices are constantly developing towards high performance, miniaturization, low power consumption and self-power supply. While the device performance and integration level continue to improve, the problem of rapid heat dissipation in small space has become a key bottleneck restricting its development. Thin film thermoelectric device is a kind of semiconductor energy conversion device, which has the advantages of all-solid-state, no noise, maintenance-free and small size. It is suitable for the development trend of electronic devices in the future, and has broad application prospects in the field of self-powered electronic devices with low power consumption and rapid cooling of electronic components with high heat flux density. Bi2Te3-based thermoelectric materials are currently the best thermoelectric materials at room temperature. In this paper, we focus on Bi2Te3-based thermoelectric thin film materials and devices. And the preparation and performance optimization methods of the thin-film thermoelectric materials will be introduced first. Subsequently, the thermoelectric thin film device structure design, fabrication processes and interface optimization approaches will be summarized. At last, the applications of thermoelectric thin film devices in thermoelectric power generation and thermoelectric refrigeration will be reviewed.