文章信息/Info

Title:

Interfacial Structural Characterization and Modulation in Metal Oxide Semiconductors

文章編號:

1674-3962(2023)03-0198-07

作者:

蔣仁輝1; 李佩1; 孟琪1; 李雷2; 趙培麗1; 賈雙鳳1; 鄭赫1; 3; 4; 王建波1; 2

（1. 武漢大學物理科學與技術學院 電子顯微鏡中心 人工微結(jié)構(gòu)教育部重點實驗室和高等研究院，湖北 武漢 430072） （2. 武漢大學科研公共服務條件平臺，湖北 武漢 430072） （3. 武漢大學蘇州研究院，江蘇 蘇州 215123） （4. 武漢大學深圳研究院，廣東 深圳 518057）

Author(s):

JIANG Renhui1;  LI Pei1;  MENG Qi1;  LI Lei2;  ZHAO Peili1; JIA Shuangfeng1;  ZHENG He1; 3; 4;  WANG Jianbo1; 2

（1. School of Physics and Technology, Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-Structures, and Institute for Advanced Studies, Wuhan University, Wuhan 430072, China） （2. Core Facility of Wuhan University, Wuhan 430072, China） （3. Suzhou Institute of Wuhan University, Suzhou 215123, China） （4. Wuhan University Shenzhen Research Institute, Shenzhen 518057, China）

關鍵詞:

金屬氧化物; 疇; 相界; 原位; 相變

Keywords:

metal oxides;  domains;  phase boundary;  in situ;  phase transition

分類號:

TN304.2+1;TG115.21+5

DOI:

10.7502/j.issn.1674-3962.202107004

文獻標志碼:

A

摘要:

界面對材料的力學、熱學、電學、磁學和催化等方面的性能有著十分重要的影響，因此界面的原子結(jié)構(gòu)解析和構(gòu)建對材料的性能調(diào)控具有重要的意義。作者課題組利用透射電子顯微技術對金屬氧化物的界面原子結(jié)構(gòu)進行表征，利用電場、電子束輻照和應力場誘導結(jié)構(gòu)相變并探討了相界面調(diào)控的可能性：（1）在Na0.36WO3.14樣品中發(fā)現(xiàn)了旋轉(zhuǎn)疇結(jié)構(gòu)，通過施加電場構(gòu)建了Na0.36WO3.14相與Na0.48WO3相的復合相界面;（2）從原子尺度揭示了Na0.5WO3.25與NaxWO3相界面的形成過程；（3）闡明了拉伸應力作用下ZnO納米橋從纖鋅礦（WZ）結(jié)構(gòu)到h-MgO結(jié)構(gòu)的可逆相變機理，研究了在壓應力作用下，CuO納米線中由于氧空位遷移引起的Cu3O2相的形核，進一步探討了Cu3O2與CuO相界面的演變過程。作者基于上述實驗結(jié)果和近期工作對金屬氧化物半導體界面的結(jié)構(gòu)表征和調(diào)控進行了綜述，希望為金屬氧化物半導體的結(jié)構(gòu)和性能調(diào)控提供參考。

Abstract:

Interfaces have important effects on the mechanical, thermal, electrical, magnetic, and catalytic properties of materials. Therefore, the analysis of atomic structure of the interface and the study of interface construction are of great significance to control the properties of materials. In this paper, the interfacial atomic structures of metal oxides were characterized by transmission electron microscopy. The phase transitions induced by electric field, electron beam irradiation and mechanical stress were presented, based upon which the possible phase boundary engineering was discussed. (1) The rotational domain structures were found in the Na0.36WO3.14 sample, and the Na0.36WO3.14/Na0.48WO3 phase boundary was created by applying an electric field. (2) The formation process of the Na0.5WO3.25/NaxWO3 interface was revealed at the atomic scale. (3) The reversible phase transformation mechanism from wurtzite (WZ) to h-MgO structure in ZnO nanobridges under tensile stress was elucidated. Additionally, the nucleation of Cu3O2 phase due to the oxygen vacancy migration in CuO nanowires under compressive stress was studied, and the Cu3O2/CuO phase boundary evolution mechanism was further discussed. The authors present this review on the structural characterization and modulation of metal oxide semiconductor interfaces based on the recent work, hoping to provide a reference for the structure and property modulation in metal oxide semiconductors.