文章信息/Info

Title:

Elastic Strain Engineering

作者:

李巨; 單智偉; 馬恩

1. 麻省理工學(xué)院 核科學(xué)與工程系與材料科學(xué)與工程系2. 西安交通大學(xué) 金屬材料強度國家重點實驗室3. 約翰·霍普金斯大學(xué) 材料科學(xué)與工程系

Author(s):

Ju Li; Zhiwei Shan; Evan Ma

1. Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology
2. State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University
3. Department of Materials Science and Engineering, Johns Hopkins University

關(guān)鍵詞:

越小越強; 超強材料;  應(yīng)變工程; 應(yīng)變硅; 納米材料; 帶隙; 激子; 催化

Keywords:

smaller is stronger;  ultrastrength material;  strain engineering;  strained Si;  nanomaterials;  bandgap;  exciton;  catalysis

DOI:

10.7502/j.issn.1674-3962.2018.12.01

文獻標志碼:

A

摘要:

彈性應(yīng)變工程是指通過改變材料彈性應(yīng)變的大小來調(diào)控和優(yōu)化其物化性能的技術(shù)。人們早在1950年左右就發(fā)現(xiàn)彈性應(yīng)變可以大幅提高單晶硅中載流子的遷移率，并在上世紀90年代后期將其應(yīng)用在CMOS工業(yè)中，產(chǎn)生了數(shù)百億美金的效益。但由于當時大彈性應(yīng)變很難在其它材料體系內(nèi)實現(xiàn)，彈性應(yīng)變工程并沒有引起人們的普遍關(guān)注。近年來，隨著納米材料制備技術(shù)的蓬勃發(fā)展，人們發(fā)現(xiàn)納米材料能承受比其塊體母材高達50~100倍的超大彈性變形能力。這重新燃起了人們對彈性應(yīng)變工程的研究興趣，并取得了很多富有應(yīng)用前景的成果。例如， 理論計算和初步的實驗結(jié)果表明，拉應(yīng)變能使鍺從間接帶隙半導(dǎo)體轉(zhuǎn)變?yōu)橹苯訋�隙的半�?dǎo)體，從而顯著改變其光學(xué)特性；應(yīng)變梯度不僅能增加二硫化鉬單分子層材料吸收太陽光的譜寬，而且能降低激子的束縛能，并使其沿應(yīng)變增加方向定向移動；通過彈性應(yīng)變調(diào)控可大幅提升光催化分解水制氫等。本文綜述了彈性應(yīng)變工程的發(fā)展歷史和研究現(xiàn)狀，并對其未來的發(fā)展方向進行了剖析和展望，期望為本領(lǐng)域的研究人員提供參考！

Abstract:

Elastic strain engineering (ESE) aims to utilize tensile, compressive and deviatoric shear stresses to control the physical and chemical properties of materials. It is broader than high-pressure physics, which deals with hydrostatic, compressive stress only. Since the 1950s, researchers have found that elastic strain and stress can greatly enhance the carrier mobility in semiconductors, and have utilized this in the CMOS industry since the 1990s. With the proliferation of nanomaterials that can survive large stresses (often at 10-100 times their bulk strength), ESE is receiving even more interest is recent years. For example, one may change the bandgap and even the band topology of semiconductors with stress, turning indirect-bandgap material into direct-bandgap material; one may drive exciton motion with an elastic strain gradient, which creates a bandgap gradient; one may change the surface catalytic properties with strain, etc. This article gives a brief overview of the field, and provides key references for prospective researchers.