文章信息/Info

Title:

Microgravity Growth of Semiconductor Materials

作者:

尹志崗; 張興旺; 吳金良

中國科學(xué)院半導(dǎo)體研究所半導(dǎo)體材料科學(xué)重點(diǎn)實(shí)驗(yàn)室， 中國科學(xué)院大學(xué)材料科學(xué)與光電技術(shù)學(xué)院

Author(s):

YIN Zhigang; ZHANG Xingwang;  WU Jinliang

Key Lab of Semiconductor Materials Science, Institute of Semiconductors， Chinese Academy of Sciences； College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences

關(guān)鍵詞:

微重力; 浮力對(duì)流; Marangoni對(duì)流; Bridgman生長; 非接觸生長

Keywords:

microgravity;  buoyancy-driven convection;  Marangoni convection;  Bridgman growth;  detached growth

DOI:

10.7502/j.issn.1674-3962.2017.04.01

文獻(xiàn)標(biāo)志碼:

A

摘要:

空間微重力環(huán)境提供了改進(jìn)地面材料性能、深入理解被地面重力掩蓋的晶體生長現(xiàn)象的獨(dú)特平臺(tái)。半導(dǎo)體空間材料科學(xué)的主要進(jìn)展有：1）基于對(duì)組分均勻的完美半導(dǎo)體的追求，人們對(duì)于晶體生長機(jī)理，特別是對(duì)流、溶質(zhì)傳輸及組分分凝的相互作用，有了更加深入的理解；2）基于空間實(shí)驗(yàn)結(jié)果，人們澄清了非接觸 Bridgman生長的內(nèi)在機(jī)理，并將之用于指導(dǎo)空間及地面實(shí)驗(yàn)；3）新的微重力晶體生長技術(shù)被提出并成功用于組分均勻半導(dǎo)體合金材料的制備。在本綜述中，我們回顧了以上方面的研究進(jìn)展，并對(duì)半導(dǎo)體空間材料科學(xué)的未來挑戰(zhàn)進(jìn)行了展望。

Abstract:

The microgravity environment aboard the space provides a unique platform to synthesize materials with improved properties as compared with their terrestrial counterparts, and allows an in-depth understanding of crystal-growth-related phenomena that are masked by gravity on the earth. The main achievements in the microgravity growth of semiconductors are listed below: i) The seeking of perfect crystals with chemical homogeneity benefits a profound understanding on the crystal growth process, typically on the relationships among the convective flows, solute transport and chemical segregation; ii) based on the microgravity experiments, the underlying mechanism of detached Bridgman growth was clarified and used to guide the space- and ground-based crystal growth processes; iii) new crystal growth schemes were proposed and implemented successfully to grow chemically homogeneous semiconductor alloys under microgravity. In this review, the main progresses in these aspects are summarized and the future challenges are discussed.