文章信息/Info

Title:

Phase Transition Properties of Vanadium Dioxide Film and Research Progress of VO2 Thin Film
Fabrication and Application

作者:

李建國(guó); 安忠維

西安近代化學(xué)研究所

Author(s):

LI Jianguo;   AN Zhongwei

Xi�餫n Modern Chemistry Research Institute

關(guān)鍵詞:

VO2薄膜; 相變溫度; 制備方法; 原子層沉積(ALD); 摻雜

DOI:

10.7502/j.issn.1674-3962.2015.11.09

文獻(xiàn)標(biāo)志碼:

A

摘要:

二氧化釩(VO2)薄膜是一種新型功能材料，其在68 ℃附近可發(fā)生低溫半導(dǎo)體相與高溫金屬相(S-M)之間的可逆相變。伴隨晶體結(jié)構(gòu)的轉(zhuǎn)變, VO2薄膜的電學(xué)、光學(xué)等物理性能發(fā)生突變，其性能的突變使得在熱、電開關(guān)以及光存儲(chǔ)方面有著廣泛的應(yīng)用而受到國(guó)內(nèi)外越來(lái)越多的學(xué)者進(jìn)行研究。但是，氧化釩存在相態(tài)復(fù)雜，VO2穩(wěn)定存在相態(tài)范圍狹窄，制備高純度的VO2薄膜是現(xiàn)階段國(guó)內(nèi)外學(xué)者的研究重點(diǎn)。就近幾年國(guó)內(nèi)外相關(guān)研究，闡述了VO2薄膜的基本相變特性，介紹了常規(guī)的VO2薄膜制備方法和新型的以原子層沉積(ALD)技術(shù)制備VO2薄膜的方法，總結(jié)了通過(guò)改變薄膜制備工藝以及摻雜工藝降低VO2薄膜相變溫度，進(jìn)一步對(duì)VO2薄膜的應(yīng)用方向、未來(lái)發(fā)展趨勢(shì)進(jìn)行展望。

Abstract:

The film of VO2  is a new functional material，and it has a reversible transition between low-temperature semiconductor phase and high-temperature metal phase(S-M) at about 68 ℃. With the transition in crystal structure, the electrical and optical physical properties appear mutation. The properties of VO2 films are widely applied in the thermal, electrical switch and optical storage, more and more scholars at home and abroad are engaged in related research. However, vanadium oxide phase states are quite complex, VO2 stable phase is in a narrow range, so preparation of high purity VO2 films is the researches emphasis and difficulty for all researcher. According to the domestic and international research, this paper briefly reviews the basic properties, and introduces common methods and atomic layer deposition(ALD) technology for preparation of VO2 thin films. Then,it reviews the methods of changing the films preparation and doping process to reduce the phase transition temperature. Application and development trend of VO2 films are discussed.