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作者:: 趙曉輝; 陶伯萬; 熊杰; 劉興釗; 李言榮; 電子科技大學(xué) 電子薄膜與集成器件國家重點(diǎn)實(shí)驗(yàn)室，成都

Author(s):: ZHAO Xiaohui; TAO Bowan; XIONG Jie; LIU Xingzhao; LI Yanrong; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu

摘要:: 介紹了采用反應(yīng)濺射法制備雙面Y2O3雙面種子層長帶材，通過引入水汽使Y原子在RABiTS基帶上氧化成膜，同時(shí)有效的避免了基帶的氧化。通過對工藝參數(shù)的優(yōu)化，成功制備了高質(zhì)量的Y2O3種子層，其面內(nèi)面外半高寬僅為38°和14°，大大改善了金屬基帶的雙軸織構(gòu)特性，同時(shí)薄膜表面粗糙度僅為28 nm。在制備的高質(zhì)量種子層上采用濺射方法外延生長YSZ阻擋層和CeO2模板層，薄膜表面光滑，并具有良好的均勻性和雙面一致性。用雙倒筒靶濺射法制備YBCO超導(dǎo)層，采用旋轉(zhuǎn)結(jié)合軸向自動進(jìn)退，改善了薄膜受熱不均的現(xiàn)象，獲得了高質(zhì)量的雙面高溫超導(dǎo)帶材。其中短樣雙面臨界電流I(xiàn)c之和超過了400 A/cmw，同時(shí)成功制備了長度超過1米，I(xiàn)c>210 A/cm-w的雙面高溫超導(dǎo)帶材。

Abstract:: High quality long doublesided Y2O 3 seed layer was prepared with reactive sputtering method. The water vapor was used to form yttrium oxide thin film while avoiding the oxidation of the RABiTS substrate. And high quality Y 2O 3 seed layer was successfully fabricated. The full widths at half maximum of inplane and out of plane rocking curves of the Y 2O3 seed layer were only 38° and 14°, respectively. The texture of the seed layer was much better than that of the metallic substrate. The surface roughness (RMS) is 28 nm. YSZ barrier layer and CeO2 cap layer were sputtered consequently on top of the Y2O3 seed layer. The film surface is smooth and crack free. Both the microstructure and surface morphology of the buffer layer is uniform along the tape length on both sides. YBCO superconducting layer was prepared with inverted cylindrical opposited target sputtering. Using rotation and automatic back and forth movement along the axis, the uniformity of the film is improved. High quality doublesided coated conductors with Ic over 400 A/cmwidth in short sample, and Ic>210 A/cmwidth in 1m long tape were successfully fabricated.